? semiconductor components industries, llc, 2012 november, 2012 ? rev. 10 1 publication order number: mbrd620ct/d mbrd620ctg series, nrvbd640ctg series switchmode power rectifiers dpak ? 3 surface mount package these state ? of ? the ? art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? extremely fast switching ? extremely low forward drop ? platinum barrier with avalanche guardrings ? nrvbd prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? esd ratings: ? machine model = c ? human body model = 3b *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. schottky barrier rectifiers 6.0 amperes, 20 ? 60 volts 1 3 4 ordering information see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. http://onsemi.com y = year ww = work week b6x0t = device code x = 2, 3, 4, 5, or 6 g = pb ? free package dpak case 369c marking diagram yww b 6x0tg
mbrd620ctg series, nrvbd640ctg series http://onsemi.com 2 maximum ratings rating symbol mbrd/nrvbd/sbr unit 620ct 630ct 640ct 650ct 660ct peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 v average rectified forward current t c = 130 c (rated v r ) per diode per device i f(av) 3 6 a peak repetitive forward current, t c = 130 c (rated v r , square wave, 20 khz) per diode i frm 6 a nonrepetitive peak surge current ? (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 75 a peak repetitive reverse surge current (2 s, 1 khz) i rrm 1 a operating junction temperature (note 1) t j ? 65 to +175 c storage temperature t stg ? 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . thermal characteristics per diode characteristic symbol value unit maximum thermal resistance, junction ? to ? case r jc 6 c/w maximum thermal resistance, junction ? to ? ambient (note 2) r ja 80 c/w 2. rating applies when surface mounted on the minimum pad size recommended. electrical characteristics per diode characteristic symbol value unit maximum instantaneous forward voltage (note 3) i f = 3 amps, t c = 25 c i f = 3 amps, t c = 125 c i f = 6 amps, t c = 25 c i f = 6 amps, t c = 125 c v f 0.7 0.65 0.9 0.85 v maximum instantaneous reverse current (note 3) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.1 15 ma 3. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbrd620ctg series, nrvbd640ctg series http://onsemi.com 3 typical characteristics figure 1. typical forward voltage, per leg figure 2. typical reverse current,* per leg figure 3. average power dissipation, per leg 1.2 1.0 0 v f , instantaneous voltage (volts) 100 10 v r , reverse voltage (volts) 40 70 0 0.1 0.0001 i f(av) , average forward current (amps) 1.0 0 10 8.0 6.0 4.0 2.0 0 2.0 i f , instantaneous forward current (amps) i p f(av) , average power dissipation (watts) 1.0 0.4 0.2 0.6 0.8 50 60 10 20 30 10 1000 3.0 4.0 5.0 6.0 7.0 10 0.1 1.4 8.0 9.0 9.0 7.0 5.0 3.0 1.0 , reverse current (ma) r 1.0 0.01 t c = 25 c 150 c 125 c 75 c t j = 150 c i pk /i av = 20 sine wave square wave dc 10 5 t j = 175 c *the curves shown are typical for the highest voltage device in the voltage grouping. t ypical reverse current for lower voltage selections can be estimated from these curves if v r is sufficient below rated v r . 150 c 75 c 25 c 11 12 13 14 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 70 50 30 20 175 c 100 0.001 125 c
mbrd620ctg series, nrvbd640ctg series http://onsemi.com 4 typical characteristics figure 4. current derating, case, per leg figure 5. current derating, ambient, per leg figure 6. typical capacitance, per leg 140 80 t c , case temperature ( c) 8.0 7.0 5.0 6.0 4.0 t a , ambient temperature ( c) 100 160 0 2.0 1.0 0.5 0 60 0 v r , reverse voltage (volts) 100 10 70 i f(av) , average forward current (amps) c, capacitance (pf) 3.0 2.0 1.0 110 90 100 120 130 150 160 120 140 20 40 60 80 1.5 2.5 3.0 10 20 30 40 50 0 3.5 4.0 i f(av) , average forward current (amps) 1 k t j = 25 c rated voltage applied t j = 150 c r jc = 6 c/w dc sine wave or square wave t j = 150 c v r = 25 v r ja = 80 c/w surface mounted on min. pad size recommended square wave or sine wave dc v r = 60 v
mbrd620ctg series, nrvbd640ctg series http://onsemi.com 5 ordering information device package shipping ? mbrd620ctt4g dpak (pb ? free) 2500 / tape & reel mbrd630ctt4g 2500 / tape & reel mbrd640ctg 75 units / rail nrvbd640ctg 75 units / rail mbrd640ctt4g 2500 / tape & reel nrvbd640ctt4g 2500 / tape & reel mbrd650ctg 75 units / rail mbrd650ctt4g 2500 / tape & reel nrvbd650ctt4g 2500 / tape & reel mbrd660ctg 75 units / rail NRVBD660CTG 75 units / rail mbrd660ctrlg 1800 / tape & reel mbrd660ctt4g 2500 / tape & reel nrvbd660ctt4g 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mbrd620ctg series, nrvbd640ctg series http://onsemi.com 6 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrd620ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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